Effect of Co-doping on Microstructural, Crystal Structure and Optical Properties of Tit-xCox02Thin films Deposited


Ti1_xCOx02 thin films have been grown on n-type Si(lOO) substrates by metal organic vapor deposition (MOCVD) using titanium (rV) isopropoxide (TTIP) and tris (2,2,6,6-tetramethyl-3, 5-heptanedionato) cobalt (III) as metal organic precursors. The parameter deposition, such as: bubbler temperature of TTIP Tb(Ti) = 50°C; substrate temperature Ts = 450°C; bubbler pressure Pb(Ti) = 260 Torr; flow rate of Ar gas through mp precursor Ar(Ti) = 100 sccm (standard cubic centimeters per minute) and flow rate of oxygen gas O2 = 60 secm were found as optimal deposition parameters. The thin films deposited were have rutile (002) crystal plane, whereas those deposited at other parameter were mixing of anatase and rutile phases. Co dopant with concentration of up to 5.77% was not changes the structure ofTi02. Increase of Co incorporated in thin films was decreasing of band-gap energy. Keywords: Crystalline orientation, Ti02, Ti1_xCOx02, MOCVD. E. Supriyantol,2, H. Sutantol,3, A. Subagio1,3,H. Saragihl, M. Budimanl,P. Arifinl, Sukimol and M. Barmawil 1Laboratory for Electronic Material Physics, Department. of Physics, Intitute of Technology Bandung, JI. Ganesha 10, Bandung 40132, Indonesia 2Department of Physics, Jember University, JI. Kalimantan III/25, Jember (68121), Indonesia 3Department of Physics, Diponegoro University, Jt. Tembalang Semarang, Indonesia