Oxidation of cube textured (100) <001> Ni and Ni-5%W foils were studied in order to verify ifNiOsurface
layer could be fonned on Ni-W similar to that Ni. The principle aim of this study is to prescribe the basic conditions for
growing a compact, adherent, smooth, and cube texture NiO suitable to be used as a buffer layer in coated conductor,
high temperature superconductor architecture. It was found that for Ni 30Jlm thick (002) NiO were fonned at oxidation
temperature of 1250 ± lOoe in air for 60 min. Under the same oxidation condition, (002) NiO with duplex-type
morphology was fonned on Ni-5%W which reduces the mechanical integrity of the sample. Furthennore, due to oxygen
diffusion during the oxidation process, sphericalNiW04 fonned inside the Ni-W substrate.
Keywords: Oxidation, nickel, nickel oxide, nickel-tungsten, rolling assisted biaxially textured substrateZ. Lockman\ M. H. Jamaluddin\ R. Nast2
I School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia,
14300 Nibong Tebal,Penang, Malaysia,
2Forschungszentrum Karlsruhe, Institut fur Technische Physik, Karlsruhe, Germany
layer could be fonned on Ni-W similar to that Ni. The principle aim of this study is to prescribe the basic conditions for
growing a compact, adherent, smooth, and cube texture NiO suitable to be used as a buffer layer in coated conductor,
high temperature superconductor architecture. It was found that for Ni 30Jlm thick (002) NiO were fonned at oxidation
temperature of 1250 ± lOoe in air for 60 min. Under the same oxidation condition, (002) NiO with duplex-type
morphology was fonned on Ni-5%W which reduces the mechanical integrity of the sample. Furthennore, due to oxygen
diffusion during the oxidation process, sphericalNiW04 fonned inside the Ni-W substrate.
Keywords: Oxidation, nickel, nickel oxide, nickel-tungsten, rolling assisted biaxially textured substrateZ. Lockman\ M. H. Jamaluddin\ R. Nast2
I School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia,
14300 Nibong Tebal,Penang, Malaysia,
2Forschungszentrum Karlsruhe, Institut fur Technische Physik, Karlsruhe, Germany
